v ds (v) = -30v i d = -17a (v gs = -20v) r ds(on) < 6.2m w (v gs = -20v) r ds(on) < 7.2m w (v gs = -10v) the AO4423 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. s g d symbol v ds v gs i dm t j , t stg symbol typ max 26 40 50 75 r q jl 14 24 i d -17 -182 pulsed drain current b power dissipation a t a =25c absolute maximum ratings t a =25c unless otherwise noted v v -14 continuous drain current af maximum units parameter t a =25c t a =70c 25 gate-source voltage drain-source voltage -30 a w p d 3.1 2 t a =70c thermal characteristics parameter junction and storage temperature range c units maximum junction-to-ambient af t 10s -55 to 150 r q ja c/w maximum junction-to-ambient a steady-state c/w maximum junction-to-lead c steady-state c/w www.freescale.net.cn 1/4 AO4423 30v p-channel mosfet general description features
symbol min typ max units bv dss -30 v -1 t j =55c -5 1 m a 10 m a v gs(th) -1.5 -2.1 -2.6 v i d(on) -182 a 5.1 6.2 t j =125c 7.4 9 5.9 7.2 m w 7.5 9.5 m w g fs 48 s v sd -0.71 -1 v i s -4.2 a c iss 2527 3033 pf c oss 583 pf c rss 397 556 pf r g 2.1 4.3 6.4 w q g 47 57 nc q gs 8 nc q gd 14 nc total gate charge forward transconductance gate source charge v ds =-5v, i d =-15a v gs =-6v, i d =-10a dynamic parameters r ds(on) static drain-source on-resistance m w gate drain charge switching parameters v ds =-30v, v gs =0v v ds =0v, v gs =20v gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-10v, v ds =-15v, i d =-15a i gss gate-body leakage current drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v i dss gate threshold voltage v ds =v gs i d =-250 m a v gs =-10v, v ds =-5v v gs =-20v, i d =-15a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =0v, v gs =25v m a zero gate voltage drain current output capacitance v gs =-10v, i d =-15a i s =-1a,v gs =0v v gs =0v, v ds =-15v, f=1mhz diode forward voltage maximum body-diode continuous current input capacitance q gd 14 nc t d(on) 12 ns t r 8 ns t d(off) 54 ns t f 87 ns t rr 26.1 32 ns q rr 12.3 nc turn-on delaytime gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.0 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =-15a, di/dt=100a/ m s i f =-15a, di/dt=100a/ m s body diode reverse recovery time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 b oard with 2oz. copper, in a still air environment w ith t a =25 c. the value in any given application depends on t he user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. note *: this device is guaranteed rg 100% tested af ter date code 8v11 (jan 1st 2008) rev10: may. 2012 www.freescale.net.cn 2/4 AO4423 30v p-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-3v -3.5v -4v -6v -10v -4.5v 0 10 20 30 40 50 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w w w w ) 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 25 50 75 100 125 150 175 normalized on-resistance v gs =-20v i d = -15a v gs =-10v i d = -15a v gs =-6v i d = -10a 25 c 125 c v ds =-5v v gs =-6v v gs =-10v v gs =-20v -15 -12.8 4 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.9 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 4 6 8 10 12 14 16 4 8 12 16 20 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-15a 25 c 125 c www.freescale.net.cn 3/4 AO4423 30v p-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics ciss 1 10 100 1000 10000 power (w) c oss c rss 0.0 0.1 1.0 10.0 100.0 1000.0 -i d (amps) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =-15v i d =-15a t j(max) =150 c t a =25 c 10 m s -15 -12.8 1 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance 0.0 0.1 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe dc t j(max) =150 c t a =25 c single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d www.freescale.net.cn 4/4 AO4423 30v p-channel mosfet
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